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Status and prospects for SiC power MOSFETs
- Source :
- IEEE Transactions on Electron Devices. April, 2002, Vol. 49 Issue 4, p658, 7 p.
- Publication Year :
- 2002
-
Abstract
- Silicon Carbide (SiC) MOSFETs have achieved high blocking voltages and performance figures-of-merit. However, they are still not economically competitive with the silicon devices, as there are two aspects of SiC MOSFET that require further improvement.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.123534181