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Status and prospects for SiC power MOSFETs

Authors :
Cooper, James A.,Jr.
Melloch, Michael R.
Singh, Ranbir
Agarwal, Anant
Palmour, John W.
Source :
IEEE Transactions on Electron Devices. April, 2002, Vol. 49 Issue 4, p658, 7 p.
Publication Year :
2002

Abstract

Silicon Carbide (SiC) MOSFETs have achieved high blocking voltages and performance figures-of-merit. However, they are still not economically competitive with the silicon devices, as there are two aspects of SiC MOSFET that require further improvement.

Details

Language :
English
ISSN :
00189383
Volume :
49
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.123534181