High-quality nitrogen-doped fluorinated silicon oxide films prepared by temperature-difference-based liquid-phase deposition

Authors :: M.K. Lee
W.H. Shieh
C.M. Shih
K.W. Tung
Tamoto, Naoko
Source :: Journal of Physical Chemistry B. Nov 20, 2003, Vol. 107 Issue 46, p12700, 5 p.
Publication Year :: 2003
Abstract: The properties of nitrogen-doped fluorinated silicon oxide (SiOF) films deposited on silicon is analyzed using hydrosilicofluoric acid and ammonium hydroxide aqua as sources by the temperature-difference-based liquid-phase deposition (TD-LPD) method. It is concluded that nitrogen-doped SiOF films by the TD-LPD method with NH4OH incorporation is suitable for intermetal dielectric application.

Subjects :: Nitrogen -- Research
Nitrogen -- Chemical properties
Nitrogen -- Optical properties
Silicon compounds -- Research
Silicon compounds -- Chemical properties
Silicon compounds -- Optical properties
Chemicals, plastics and rubber industries

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