In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells

MLA

Ghezzi, C., et al. “In-Plane Electrical Transport in n-Type Selectively Doped GaSb/AlGaSb Multiquantum Wells.” Journal of Applied Physics, vol. 90, no. 10, Nov. 2001, p. 5166. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.123651110&authtype=sso&custid=ns315887.

APA

Ghezzi, C., Cioce, B., Magnanini, R., Parisini, A., Chalmers, J. M., Turin, L., & Everall, N. J. (2001). In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells. Journal of Applied Physics, 90(10), 5166.

Chicago

Ghezzi, C., B. Cioce, R. Magnanini, A. Parisini, J.M. Chalmers, L. Turin, and N.J. Everall. 2001. “In-Plane Electrical Transport in n-Type Selectively Doped GaSb/AlGaSb Multiquantum Wells.” Journal of Applied Physics 90 (10): 5166. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.123651110&authtype=sso&custid=ns315887.