Characterization of deep levels in 6 H-SiC by optical-capacitance-transient spectroscopy

Authors :: Nakakura, Y.
Ichimura, M.
Kato, M.
Arai, E.
Tokuda, Y.
Nishino, S.
Source :: Journal of Applied Physics. Sept 1, 2003, Vol. 94 Issue 5, 3233-3238
Publication Year :: 2003
Abstract: Defects in epitaxial 6H-SiC were characterized by an optical- capacitance- transient spectroscopy (O- CTS) method. The four peaks observed were; the activation energy of peak 1 (the E2 center), peak 2, peak3a (the R center) and peak 3b.

Subjects :: Silicon carbide -- Optical properties
Optics -- Research
Physics

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