Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC

Authors :: Danielsson, E.
Zetterling, C.-M.
Ostling, M.
Tsvetkov, D.
Dmitriev, V.A.
Source :: Journal of Applied Physics. Feb 15, 2002, Vol. 91 Issue 4, 2372-2379
Publication Year :: 2002
Abstract: The electrical properties and the characteristics of GaN and AlGaN heterojunction diodes are investigated with varying Al composition. The tunnel assisted recombination model agreed well with both current-voltage and capacitance-voltage measurements for this diode.

Subjects :: Silicon carbide -- Research
Silicon carbide -- Electric properties
Diodes -- Research
Aluminum -- Research
Aluminum -- Electric properties
Gallium nitrate -- Research
Gallium nitrate -- Electric properties
Physics

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