Largely tunable midinfrared (8-12 mu m) difference frequency generation is isotropic semiconductors

Largely tunable midinfrared (8-12 mu m) generation is obtained in GaAs and AnZe slabs by difference frequency mixing of optical paramagnetic oscillator output waves (approximately 2 mu m). The coherence lengths determined in semiconductor wedges are in agreement with estimates from known Sellmeir formulas.