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Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates
- Source :
- Journal of Applied Physics. Jan 15, 2002, Vol. 91 Issue 2, p874, 4 p.
- Publication Year :
- 2002
-
Abstract
- A promising epitaxial growth technique, namely helicon-wave-excited plasma sputtering epitaxy (HWPSE), is proposed for the growth of ZnO epilayers. The ZnO epilayer exhibited a dominant near-band-edge photoluminescence (PL) peak at 300 K.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 91
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.123702192