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Design optimization of A1InAs-GaInAs HEMTs for low-noise applications

Authors :
Mateos, Javier
Gonzalez, Tomas
Pardo, Daniel
Bollaert, Sylvain
Parenty, Thierry
Cappy, Alain
Source :
IEEE Transactions on Electron Devices. August, 2004, Vol. 51 Issue 8, p1228, 1233 p.
Publication Year :
2004

Abstract

The optimization of AlInAs-GaInAs heterojunction bipolar transistors (HEMTs) for low-noise applications is investigated. An ensemble Monte Carlo simulation is used to study the influence of three important technological parameters on the noise level.

Subjects

Subjects :
Monte Carlo method -- Analysis
Noise generators (Electronics) -- Testing
Bipolar transistors -- Electric properties
Bipolar transistors -- Testing
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
51
Issue :
8
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.123799742

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