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Hole traps in silicon dioxides-part II: generation mechanism

Authors :
Zhao, Ze Z.
Zhang, Jian F.
Groeseneken, Guido
Degraeve, R.
Source :
IEEE Transactions on Electron Devices. August, 2004, Vol. 51 Issue 8, p1274, 7 p.
Publication Year :
2004

Abstract

Physical processes responsible for the generation of hole traps in silicon dioxides are investigated. It is indicated that the most important processes for hole-trap generation are found to be in direct interaction of injected holes with the oxide.

Subjects

Subjects :
Holes (Electron deficiencies) -- Research
Semiconductor device
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
51
Issue :
8
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.123800028

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