Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures

The Pt/SrBi2Ta2O6 (SBT)/Si metal-ferroelectric-semiconductor (MFS) and Pt/SBT/Y2O3/Si metal-ferroelectric-insulator-semiconductor (MFIS) are prepared and the correlation between the memory window and the thickness ratio of SBT/Y2O3 is investigated. The analysis shows that the memory window equals to the difference between the effective coercive voltage applied to the ferroelectric film and the flat band voltage shift due to charge injection.