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Continuous thin barriers for low-resistance spin-dependent tunnel junctions

Authors :
Jianguo Wang
Yaowen Liu
Freitas, P.P.
Snoeck, E.
Martins, J.L.
Source :
Journal of Applied Physics. May 15, 2003, Vol. 93 Issue 10, p8367, 3 p.
Publication Year :
2003

Abstract

The coupling field between two ferromagnetic layers of different types of low resistance tunnel junctions is analyzed to check the barrier continuity. The results indicate that more uniform continuous barriers are formed with HfO(sub x) or doped HfAlO(sub x) or ZrAlO(sub x) than with AlO(sub x) barriers.

Subjects

Subjects :
Ferromagnetism -- Research
Zirconium -- Magnetic properties
Aluminum compounds -- Magnetic properties
Oxygen -- Magnetic properties
Hafnium -- Magnetic properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
93
Issue :
10
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.123837495

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