Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy

Authors :: Derluyn, J.
Moerman, I.
Leys, M.R.
Patriarche, G.
Misiewicz, J.
Sek, G.
Rycko, K.
Rudno-Rudzinski, W.
Kudraweic, R.
Source :: Journal of Applied Physics. August 15, 2003, Vol. 94 Issue 4, 2752-2754
Publication Year :: 2003
Abstract: Nitrogen incorporation behavior in GaNAs bulk layers and GaInNAs quantum wells (QWs), grown by metalorganic chemical vapor deposition is discussed. The optical quality of the quantum wells is linked to the abruptness of the QWs and the nitrogen content.

Subjects :: Quantum wells -- Research
Gallium -- Research
Gallium -- Chemical properties
Nitrogen compounds -- Research
Nitrogen compounds -- Chemical properties
Physics

Tools