Hole Schottky barrier height enhancement and its application to metal-semiconductors-metal photodetectors

Authors :: Lin, S.D.
Lee, C.P.
Source :: Journal of Applied Physics. Dec 1, 2001, Vol. 90 Issue 11, p5666, 4 p.
Publication Year :: 2001
Abstract: The structure of metal semiconductors-metal photo detectors (MSMPDs) has been used to investigate the modified and unmodified Schottky barrier heights for holes on GaAs. By using a thin and doped top layer, the barrier height can be varied over a wide range and by using a modified height of 0.79 eV, a reduction has been achieved in the dark current for over three orders of magnitude for MSM photo detectors.

Subjects :: Semiconductor-metal boundaries -- Research
Semiconductors -- Electric properties
Holes (Electron deficiencies) -- Research
Physics

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