Recombination-enhanced defect motion in forward-biased 4H-SiC p-n diodes

The generation and evolution of defects in 4H-SiC p-n junctions due to carrier injection under forward bias are investigated by synchrotron white beam x-ray topography, electroluminescence imaging, and KOH etching. Low angle grain boundaries are observed to act as one of a number of possible nucleation sites of stacking faults.