Design optimization of A1InAs-GaInAs HEMTs for high-frequency applications

The static and dynamic characteristics of 50-nm-gate A1INAs delta-doped high-electron mobility transistors (HEMTs) are investigated using a Monte Carlo simulator. The study confirms that the value of the delta-doping must be increased to avoid the reduction of the drain current due to the depletion of the channel by the surface potential.