Sequential lateral solidification processing for polycrystalline Si TFTs

A study focused on the 2-shot sequential lateral solidification (SLS) process for crystallization of thin films for thin-film transistor (TFT) applications by investigating the effect of process parameter variation on the resulting microstructure, as well as on the performance of TFTs fabricated on the material is presented. The method helps to improve the mobility directionality ration between devices with majority carrier flow parallel and perpendicular to the lateral growth direction, respectively from 0.3 to over 0.7.