Hot-carrier degradation phenomena in lateral and vertical DMOS transistors

The hot-carrier degradation behavior of both lateral and vertical integrated DMOS is investigated in detail by the analysis of the electrical data, charge pumping measurements and two-dimensional device simulations. Findings show that due to the specific nature of the vertical DMOS (VDMOS) device, the hot hole injection is absent in the device and the channel N(sub it) formation is substantially lower in the VDMOS.