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High breakdown voltage undoped A1GaN-Gan power HEMT on sapphire substrate and its demonstration for DC-DC converter application
- Source :
- IEEE Transactions on Electron Devices. Nov, 2004, Vol. 51 Issue 11, p1913, 5 p.
- Publication Year :
- 2004
-
Abstract
- Undoped AIGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The results show the possibilities of AIGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.125296176