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Low energy nitrogen ion implantation of InSb

Authors :
Mahboob, I.
Veal, T.D.
McConville, C.F.
Source :
Journal of Applied Physics. Nov 1, 2004, Vol. 96 Issue 9, p4935, 4 p.
Publication Year :
2004

Abstract

The modification of the electronic properties of InSb by implantation of low-energy N(sub 2)(super +) ions and annealing are investigated. A non-uniform electron density depth profile is observed in the near-surface region.

Subjects

Subjects :
Antimony -- Atomic properties
Indium -- Atomic properties
Nitrogen -- Atomic properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
96
Issue :
9
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.125379655

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