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Effect of impurity incorporation on crystallization in AIN sublimation epitaxy
- Source :
- Journal of Applied Physics. Nov 1, 2004, Vol. 96 Issue 9, p5293, 5 p.
- Publication Year :
- 2004
-
Abstract
- Graphite, graphite-tantalum (Ta) and Ta growth environment to the sublimination epitaxy of aluminum nitride (AIN) is implemented, and morphological and cathodoluminescence emission properties of AIN crystals are studied. Three different types of crystallites form in the three different type of growth environment, which presumably manifests the relationship between crystallite-habit-type and impurities are presented.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 96
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.125410847