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Effect of impurity incorporation on crystallization in AIN sublimation epitaxy

Authors :
Kakanakova-Georgieva, A.
Geuorguiev, G.K.
Yakimova, R.
Janzen, E.
Source :
Journal of Applied Physics. Nov 1, 2004, Vol. 96 Issue 9, p5293, 5 p.
Publication Year :
2004

Abstract

Graphite, graphite-tantalum (Ta) and Ta growth environment to the sublimination epitaxy of aluminum nitride (AIN) is implemented, and morphological and cathodoluminescence emission properties of AIN crystals are studied. Three different types of crystallites form in the three different type of growth environment, which presumably manifests the relationship between crystallite-habit-type and impurities are presented.

Details

Language :
English
ISSN :
00218979
Volume :
96
Issue :
9
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.125410847