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Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs
- Source :
- IEEE Transactions on Electron Devices. Dec, 2004, Vol. 51 Issue 12, p1963, 9 p.
- Publication Year :
- 2004
-
Abstract
- An attempt was made to demonstrate systematically the temperature-dependent dc characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment. The series resistance of base-emitter junction of studied device can be effectively reduced because of the use of sulfur passivation.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.126770587