Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing

H(super +) was implanted into single-crystal silicon with a dose of 1X10(super 16)/cm(super 2) and an energy of 30 KeV, and then He(super +) was implanted into the same sample with the same dose and an energy of 33 KeV. The results showed that co-implantation of H and He decreases the total implantation dose, with which the surface could exfoliate during annealing.