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Transport properties of Be and Si-doped AlSb

Authors :
Bennett, Brian R.
Moore, W.J.
Yang, M.J.
Shanabrook, B.V.
Source :
Journal of Applied Physics. June 1, 2000, Vol. 87 Issue 11, p7876, 4 p.
Publication Year :
2000

Abstract

Thick epitaxial layers of AlSb(Si) and AlSb (Be) were grown by molecular beam epitaxy and characterized by variable-temperature Hall/van der Pauw measurements. Results suggest Si as an acceptor in A1Sb with an energy level of 33 plusmn 4 whereas Be is also an acceptor with an energy level of 38 plusmn 4.

Subjects

Subjects :
Beryllium -- Atomic properties
Semiconductor doping -- Research
Aluminum compounds -- Atomic properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
87
Issue :
11
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.127613210

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