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Rapid thermal oxidation of silicon in zone

Authors :
Zhenjiang, Cui
Madsen, Jonathan M.
Takoudis, Christos G.
Source :
Journal of Applied Physics. June 1, 2000, Vol. 87 Issue 11, p8181, 6 p.
Publication Year :
2000

Abstract

Rapid thermal oxidation of Si in ozone gas is studied by using in situ mirror enhanced reflection Fourier transform infrared (IR) spectroscopy at temperatures between 200 and 550 degreeC. The oxidation rate in ozone is found to be comparable to the one in pure oxygen at approximately 200 degree C higher temperature.

Subjects

Subjects :
Fourier transform infrared spectroscopy -- Usage
Silicon -- Chemical properties
Oxidation-reduction reaction -- Analysis
Physics

Details

Language :
English
ISSN :
00218979
Volume :
87
Issue :
11
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.127621909

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