X-ray absorption fine structure and electron energy loss spectroscopy study of silicon nanowires at the Si L(sub 3,2) edge

Authors :: X. -H. Sun
Y. -F. Zhang
N. B. Wong
S. T. Lee
Peng, H. Y.
Sham, T. K.
Sammynaiken, R.
Naftel, S. J.
P. Zhang
Y. -H. Tang
Source :: Journal of Applied Physics. Dec 15, 2001, Vol. 90 Issue 12, p6379, 5 p.
Publication Year :: 2001
Abstract: X-ray absorption fine structures (XAFS) and electron energy loss spectroscopy (EELS) at the Si L(sub 3,2) edge is used to investigate a series if Si nanowires. Optical properties of these Si nanowires are studied by using X-ray excited optical luminescence (XEOL).

Subjects :: Luminescence -- Analysis
Silicon compounds -- Usage
Silicon compounds -- Properties
Physics

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