Long wavelength infrared photocurrent study of Si-SiGe heterostructures

Authors :: Liu, H.C.
Baribeau, J.M.
Buchanan, M.
Simmons,J.G.
Source :: Journal of Applied Physics. Feb 15, 1992, Vol. 71 Issue 4, p2039, 3 p.
Publication Year :: 1992
Abstract: A long-wavelength infrared photocurrent study was used to analyze a series of a Si-SiGe double-heterostructures. The results showed that the active region was a thin heavily p-type doped SiGe layer. In various SiGe compositions, photocurrent spectra featuring different cutoff wavelengths were observed. This was attributed to internal photoemission in theheterojunction.