Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-micrometer cutoff wavelengths

The substantial suppression of infrared blackbody emission from HgCdTe photoiodide arrays with cutoff wavelengths of 4.8, 5.5, and 6.0 micrometer. At room temperature, a reverse bias induces internal negative luminescence efficiencies of 95%, 93%, and 88%, respectively, which correspond to apparent cooling of the surface temperatures by 60, 59, and 49K.