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High-mobility InGaAs/InAIAs pseudomorphic heterostructures on InP (001)
- Source :
- Journal of Applied Physics. March 1, 2005, Vol. 97 Issue 5, p053706-1, 6 p.
- Publication Year :
- 2005
-
Abstract
- The growth of strained InxGa(1-x)As alloys on InP by gas source molecular-beam epitaxy in the 350-500 degree Celsius range was studied. The influence of the gas structure design on the electron mobility which reaches 16000 and 139000 cm(super 2)/Vs at 300 and 77K, respectively, with a corresponding Ns of 8.5*10(super 11) cm(super -2) for an optimized structure was the best reported for the InGaAs/InAIAs system.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 97
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.132261157