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Evolution of vacancy ordering and defect structure in epitaxial YSi 2-x thinfilms on (111)Si
- Source :
- Journal of Applied Physics. April 1, 1992, Vol. 71 Issue 7, p3307, 6 p.
- Publication Year :
- 1992
-
Abstract
- Conventional and high-resolution transmission electronmicroscopy were used to analyze the evolution of vacancy ordering and defect structure in epitaxial YSi thin films on Si. Epitaxial YSi 2-x were formed whensamples were annealed at 500 degrees celsius for 120 seconds. When the temperature reached 600 degrees celsius for a period of 15 seconds, an ordered vacancy superstructure was formed and additional diffraction spots appeared. Atthe same temperature but for longer periods, or at higher temperatures, an out-of-step structure was formed and the extra diffraction spots were split.
- Subjects :
- Thin films -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 71
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.13241032