Structure and crystallization of low-pressure chemical vapor deposited silicon films using Si2H6 gas

MLA

Hong, C. H., et al. “Structure and Crystallization of Low-Pressure Chemical Vapor Deposited Silicon Films Using Si2H6 Gas.” Journal of Applied Physics, vol. 71, no. 11, June 1992, p. 5427. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.13316490&authtype=sso&custid=ns315887.

APA

Hong, C. H., Park, C. Y., & Kim, H.-J. (1992). Structure and crystallization of low-pressure chemical vapor deposited silicon films using Si2H6 gas. Journal of Applied Physics, 71(11), 5427.

Chicago

Hong, C.H., C.Y. Park, and H.-J. Kim. 1992. “Structure and Crystallization of Low-Pressure Chemical Vapor Deposited Silicon Films Using Si2H6 Gas.” Journal of Applied Physics 71 (11): 5427. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.13316490&authtype=sso&custid=ns315887.