A bulk silicon dissolved wafer process for microelectromechanical devices

An improved bulk silicon micromachining process is presented. The simple method, which yields microelectromechanical devices from boron-doped bulk silicon, necessitates only three masking steps and overcomes limitations on the thickness-to-width aspect ratio with an improved reactive ion etching scheme. The technology is used in the fabrication of laterally driven comb structures, some of which are analysed in the study.