Structural and magnetic properties of epitaxial L2(sub 1)-structured Co(sub 2)(Cr, Fe)Al films grown on GaAs(001) substrates

Authors :: Hirohata, A.
Kurebayashi, H.
Okamura, S.
Kikuchi, M.
Masaki, T.
Nozaki, T.
Tezuka, N.
Inomata, K.
Source :: Journal of Applied Physics. May 15, 2005, Vol. 97 Issue 10, 103714-1-103714-8
Publication Year :: 2005
Abstract: An optimized condition is used to successfully grow both L2(sub 1) polycrystalline Co(sub 2)CrAl and epitaxial L2(sub 1)-structured Co(sub 2)FeAl films onto GaAs(001) substrates. These films are used to fabricate the magnetic tunnel junctions (MTJs), which show 2% tunnel magnetoresistance (TMR) for the Co(sub 2)CrAl MTJ at 5K and 9% for the Co(sub 2)FeAl MTJ at room temperature (RT).

Subjects :: Gallium arsenide -- Chemical properties
Gallium arsenide -- Optical properties
Dielectric films -- Research
Thin films -- Research
Epitaxy -- Research
Physics

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