Ionizing radiation effects on phosphorus implanted N+ poly gate MOS capacitors with thin gate oxides

Radiation effects on phosphorous implanted N+ polygate MOS capacitors with a 15 nm oxide grown at different temperatures are investigated. The dependence of the radiation hardness of thin gate oxides on the oxidation temperature as a function of the irradiation bias is investigated and the results obtained are compared with those of previous studies for both thick and thin oxides. The oxide charge build-up depends on the phosphorus concentration. To explain the measured effects, the physical mechanisms of trapped hole tunnel annealing are discussed.