Pore morphology and the mechanism of pore formation in n-type silicon

Analysis of pore morphology showed that porous layers formed in the n-type silicon are composed of pores with cross section oriented perpendicular to the (100) plane. (001) planes in the (100) zone define the pore walls with secondary pores propagating from the main pores in the (010) and (001) directions. Pore morphology results from a tunneling mechanism due to a high-field region created by the curvature at the pore front.