A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation

Electron trapping and thermal detrapping properties in SiO2 prepared by plasma and thermal oxidation were investigated using avalanche electron injection measurement. The results showed that the plasma oxide featured more severe electron trapping. In addition, two electron capture cross sections were observed in the plasma oxide. The electron detrapping process in the plasma oxide was different from that in the thermal oxide.