Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

Authors :: Capizzi, M.
Coluzza, C.
Emiliani, V.
Frankl, P.
Frova, A.
Sarto, F.
Bonapasta, A. Amore
Sobiesierski, Z.
Sacks, R.N.
Source :: Journal of Applied Physics. August 15, 1992, Vol. 72 Issue 4, p1454, 6 p.
Publication Year :: 1992
Abstract: Photoluminescence experiments were used to investigate hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells. The results showed that the density of impurities and defects determined the level of volume incorporation of hydrogen. At moderate hydrogen treatment, novel emission bands and passivation of shallow acceptors were observed. Heavy hydrogen treatment produced a deep structure.

Subjects :: Thin films -- Research
Quantum wells -- Research
Hydrogen -- Research
Semiconductors -- Research
Physics

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