Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs

Deep-level transient spectroscopy (DLTS) and constant-capacitance DLTS (CC-DLTS) measurements of selenium-related DX centers in AlGaAs were compared to investigate the influence of refilling effects on obtained values. CC-DLTS measurement revealed the existence of one DX center while DLTS indicated two. The results showed that DLTS measurements were greatly affected by refilling effects which occur during capacitance transients. However, the refilling effects did not affect CC-DLTS measurements.