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Preparation of Fe-doped ZnO ferromagnetic semiconductor by sol-gel method with hydrogen treatment
- Source :
- IEEE Transactions on Magnetics. Oct, 2005, Vol. 41 Issue 10, p2730, 3 p.
- Publication Year :
- 2005
-
Abstract
- [Zn.sub.1-x][Fe.sub.x]O (x = 0.00, 0.01, 0.03, 0.05, 0.07, and 0.10) compounds were fabricated by the sol-gel method. The crystal structure and magnetic properties were investigated as a function of doped Fe concentration. Specifically, we have used hydrogen treatment for the control of phase separation. The X-ray diffraction patterns show that the wurzite structure of ZnO does not change for the doping range below x = 0.07. Furthermore, we could not find any Fe cluster or phase separation in the X-ray diffraction patterns. The Fe-doped ZnO indicate ferromagnetic behaviors with the Curie temperature higher than room temperature. Then, the magnetic moment per Fe atom increased with increasing Fe concentration. Index Terms--Diluted magnetic semiconductor (DMS), ferromagnetic, hydrogen treatment, spintronics.
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 41
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.138394097