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Preparation of Fe-doped ZnO ferromagnetic semiconductor by sol-gel method with hydrogen treatment

Authors :
Ahn, Geun Young
Park, Seung-Iel
Kim, Sam Jin
Lee, Bo Wha
Kim, Chul Sung
Source :
IEEE Transactions on Magnetics. Oct, 2005, Vol. 41 Issue 10, p2730, 3 p.
Publication Year :
2005

Abstract

[Zn.sub.1-x][Fe.sub.x]O (x = 0.00, 0.01, 0.03, 0.05, 0.07, and 0.10) compounds were fabricated by the sol-gel method. The crystal structure and magnetic properties were investigated as a function of doped Fe concentration. Specifically, we have used hydrogen treatment for the control of phase separation. The X-ray diffraction patterns show that the wurzite structure of ZnO does not change for the doping range below x = 0.07. Furthermore, we could not find any Fe cluster or phase separation in the X-ray diffraction patterns. The Fe-doped ZnO indicate ferromagnetic behaviors with the Curie temperature higher than room temperature. Then, the magnetic moment per Fe atom increased with increasing Fe concentration. Index Terms--Diluted magnetic semiconductor (DMS), ferromagnetic, hydrogen treatment, spintronics.

Details

Language :
English
ISSN :
00189464
Volume :
41
Issue :
10
Database :
Gale General OneFile
Journal :
IEEE Transactions on Magnetics
Publication Type :
Academic Journal
Accession number :
edsgcl.138394097