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Series resistance of self-aligned silicided source/drain structure
- Source :
- IEEE Transactions on Electron Devices. Jan, 1993, Vol. 40 Issue 1, p197, 10 p.
- Publication Year :
- 1993
-
Abstract
- Numerical simulations are conducted to investigate the effect of contact interface recession on the external resistance of self-aligned silicided (salicide) source/drain structures. It is shown that the silicidation mechanismcauses a rise in resistance that may be in the order of several hundred ohms-micrometers. The simulated results are then compared to reported measurements of external resistance for which a 20% error is found.
Details
- ISSN :
- 00189383
- Volume :
- 40
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.13859102