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Series resistance of self-aligned silicided source/drain structure

Authors :
Tsui, Bing-Yue
Chen, Mao-Chieh
Source :
IEEE Transactions on Electron Devices. Jan, 1993, Vol. 40 Issue 1, p197, 10 p.
Publication Year :
1993

Abstract

Numerical simulations are conducted to investigate the effect of contact interface recession on the external resistance of self-aligned silicided (salicide) source/drain structures. It is shown that the silicidation mechanismcauses a rise in resistance that may be in the order of several hundred ohms-micrometers. The simulated results are then compared to reported measurements of external resistance for which a 20% error is found.

Details

ISSN :
00189383
Volume :
40
Issue :
1
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.13859102