Growth of epitaxial TiN films on MgO(100) by high current discharge plasma

Authors :: Miyagawa, S.
Saitoh, K.
Niwa, H.
Ikeyama, M.
Massouras, G.
Miyagawa, Y.
Source :: Journal of Applied Physics. Dec 15, 1992, Vol. 72 Issue 12, p5663, 5 p.
Publication Year :: 1992
Abstract: The use of a high currentdischarge plasma for the fabrication of epitaxial TiN thin films on MgO (100) substrates was evaluated using Rutherford backscattering spectrometry. The results showed that particles intruding on the MgO substrate could be ionized with efficiencies as high as 70%. The minimum channeling yields for (100) and (110) oriented axes at a temperature of 55 degrees celsius and a growth rate of40 angstroms per second were 1.4% and 2.0%.