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Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO2 glasses
- Source :
- Journal of Applied Physics. July 15, 2005, Vol. 98 Issue 2, p023701-1, 3 p.
- Publication Year :
- 2005
-
Abstract
- The electron-paramagnetic-resonance method is used to study the fictive temperature (T(sub f)) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silica glasses created by UV irradiation at low temperatures. The results reveal that the change in both T(sub f) and F doping can modify the network of SiO2 glass, leading to the suppression of the formation of STHs.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.138596815