Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO2 glasses

The electron-paramagnetic-resonance method is used to study the fictive temperature (T(sub f)) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silica glasses created by UV irradiation at low temperatures. The results reveal that the change in both T(sub f) and F doping can modify the network of SiO2 glass, leading to the suppression of the formation of STHs.