Effects of argon presputtering on the formation of aluminum contacts on polycrystalline diamond

The effects of an argon presputtering process and postdeposition annealing onthe formation of aluminum electrical contacts on polycrystalline diamond were investigated using x-ray photoelectron spectroscopy and Auger electron spectroscopy. The results showed that presputtering induced the Al overlayer toreact with the diamond surface to form Al-C bonds after annealing at 430 degrees celsius. Defects in the surface region played a role in the solid statediffusion of Al and C at the interface and in the promotion of the reaction.