A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

A new technology to advance optoelectronic integration is presented. It involves a class of optoelectronic devices with an inversion channel heterostructure containing one quantum-well active region. The inversion channel's geometry is such that it may be altered for the designing afield effect transistor, a current injection laser, a field effect modulator ora waveguide photodetector. A discussion on epitaxial growth and fabrication fordevice implementation is also provided.