Calculated majority- and minority-carrier mobilities in heavily doped silicon and comparisons with experiment

Majority and minority electron and hole mobilities are theoretically calculated in silicon at 300 Kelvin using the derived scattering and mobility expressions. The expression for low-field mobility is presented with theoretical considerations of several scattering mechanisms. The carrier energy and angular dependencies of the scattering rates due to ionized impurities are compared in terms of their Born approximation and quantum-mechanical phase shift expressions. Meanwhile, these scattering and mobility expressions are used in the silicon calculations and the results are found to be in agreement with the experimental mobility data for silicon.