Universal MOSFET hole mobility degradation models for circuit simulation

Subjects

Subjects :

Metal oxide semiconductor field effect transistors -- Models
Computer simulation -- Models
Mathematical models -- Research

Details

ISSN :

02780070

Volume :

v12

Issue :

n3

Database :

Gale General OneFile

Journal :

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Publication Type :

Academic Journal

Accession number :

edsgcl.14010020