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Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped Hg0.8Cd0.2Te on (100) Cd0.96Zn0.04Te
- Source :
- Journal of Applied Physics. April 1, 1993, Vol. 73 Issue 7, p3305, 8 p.
- Publication Year :
- 1993
-
Abstract
- Research was conducted on (100) Hg1-xCdxTe epilayers grown via molecular beam epitaxy based on various Hg and Te flux ratios. The Hg and Te flux ratios were found to significantly influence hillockdensity, electron concentration and electron mobility. Results also showed thatoptimal Hg ad Te ratios reduced structural defects caused by nonstoichiometry.
- Subjects :
- Epitaxy -- Research
Molecular beams -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 73
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14046374