Threshold voltage and C-V characteistics of SOI MOSFET's related to Si film thickness variation on SIMOX wafers

The threshold voltage and current-voltage properties of silicon-on-insulator metal oxide semiconductor field effect transistors (MOSFET) are analyzed with respect to silicon film thickness nonuniformity on wafers fabricated by the separation by implanted oxygen process. Results indicate a linear proportionality between the thickness variation and the threshold voltage differences for a MOSFET operating in the depletion region.