Design optimization of an active resonant snubber for high power IGBT converters

The design optimization procedure for a new active resonant snubber topology, specifically suited for high power insulated gate bipolar transistor (IGBT) converters, is introduced. After the basic operation principles and certain implementation consideration are discussed, the optimization strategy, based on an analytical loss evaluation, is described. Experimental results obtained on an IGBT phase-arm fitted with an optimally designed snubber are presented. Index Terms--Active resonant snubber topology, insulated gate bipolar transistor (IGBT).