A new technique to decompose closely spaced interface and bulk trap states using temperature dependent pulse-width deep level transient spectroscopy method: an application to PT/CdS photodetector

A new technique for the decomposition of closely spaced interface and bulk deep trap states was presented. The technique utilizes temperature-dependent pulse-width deep level transient spectroscopy to separate two bulk trap states and one continuously distributed interface state in a Pt/CdS photodiode, thus allowing a more accurate measurement of the physical parametrs to be obtained.