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An analytical hot-carrier induced degradation model in polysilicon TFTs
- Source :
- IEEE Transactions on Electron Devices. Oct, 2005, Vol. 52 Issue 10, p2182, 6 p.
- Publication Year :
- 2005
-
Abstract
- Hot-carrier effects in n-channel polysilicon thin-film transistors (TFTs), with channel width W=10 mum and length L=10 mum are investigated. The apparent channel mobility is derived considering that the mobility of the damaged region is described with the mobility of amorphous Si TFTs, whereas the mobility of the virgin device.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 52
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.141374439